? semiconductor components industries, llc, 2011 july, 2011 ? rev. 2 1 publication order number: NTP5863N/d NTP5863N n-channel power mosfet 60 v, 97 a, 7.8 m features ? low r ds(on) ? high current capability ? 100% avalanche tested ? these devices are pb ? free, halogen free and are rohs compliant maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage ? continuous v gs 20 v gate ? to ? source voltage ? nonrepetitive (t p < 10 s) v gs 30 v continuous drain current steady state t c = 25 c i d 97 a t c = 100 c 68 power dissipation steady state t c = 25 c p d 150 w pulsed drain current t p = 10 s i dm 383 a operating and storage temperature range t j , t stg ? 55 to +175 c source current (body diode) i s 97 a single pulse drain ? to ? source avalanche energy (l = 0.1 mh, i l(pk) = 56 a) e as 157 mj peak diode recovery (dv/dt) dv/dt 4.1 v/ns lead temperature for soldering purposes (1/8 from case for 10 seconds) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? case (drain) steady state r jc 1.0 c/w junction ? to ? ambient ? steady state (note 1) r ja 36 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 sq in pad size, (cu area 1.127 sq in [2 oz] including traces). http://onsemi.com to ? 220ab case 221a style 5 1 2 3 4 marking diagrams & pin assignments g = pb ? free device a = assembly location y = year ww = work week ntp 5863ng ayww 1 gate 3 source 4 drain 2 drain see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information 60 v 7.8 m @ 10 v r ds(on) max i d max v (br)dss 97 a g s n ? channel mosfet d
NTP5863N http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) characteristics symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j i d = 250 a, ref to 25 c 47 mv/ c zero gate voltage drain current i dss v gs = 0 v v ds = 60 v t j = 25 c 1.0 a t j = 125 c 50 gate ? body leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 2.0 4.0 v negative threshold temperature coefficient v gs(th) /t j 9.1 mv/ c drain ? to ? source on ? resistance r ds(on) v gs = 10 v, i d = 20 a 6.5 7.8 m forward transconductance g fs v ds = 15 v, i d = 30 a 12 s charges, capacitances & gate resistance input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1 mhz 3200 pf output capacitance c oss 350 transfer capacitance c rss 230 total gate charge q g(tot) v gs = 10 v, v ds = 48 v, i d = 48 a 55 nc threshold gate charge q g(th) 3.4 gate ? to ? source charge q gs 14.5 gate ? to ? drain charge q gd 19 gate resistance r g 0.4 switching characteristics, v gs = 10 v (note 3) turn ? on delay time t d(on) v gs = 10 v, v dd = 48 v, i d = 48 a, r g = 2.5 10 ns rise time t r 34 turn ? off delay time t d(off) 25 fall time t f 9.0 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v i s = 48 a t j = 25 c 0.96 1.5 v dc t j = 150 c 0.85 reverse recovery time t rr v gs = 0 v dc , i s = 48 a dc , di s /dt = 100 a/ s 32 ns charge time t a 20 discharge time t b 12 reverse recovery stored charge q rr 28 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTP5863N http://onsemi.com 3 typical performance characteristics figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 5 4 3 2 1 0 0 25 50 75 125 150 175 200 7 5 4 3 2 0 50 100 150 figure 3. on ? resistance vs. gate voltage figure 4. on ? resistance vs. drain current and gate voltage v gs , gate ? to ? source voltage (v) i d , drain current (a) 10 9 8 7 6 5 4 0.000 0.005 0.010 0.015 0.020 0.030 100 90 80 70 60 50 40 0.0060 0.0065 0.0070 0.0075 0.0080 figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage t j , junction temperature ( c) v ds , drain ? to ? source voltage (v) 150 125 100 50 25 0 ? 25 ? 50 0.6 0.8 1.0 1.6 1.8 2.0 60 30 20 10 100 1000 10,000 100,000 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) 100 10 v 5.5 v v gs = 6.5 v 4.5 v 5.0 v 7.5 v t j = 25 c 25 75 125 v ds 10 v t j = 25 c t j = ? 55 c t j = 125 c t j = 25 c r ds(on) , drain ? to ? source resistance ( ) t j = 25 c v gs = 10 v 75 175 1.2 1.4 2.2 v gs = 10 v i d = 20 a 40 50 t j = 25 c t j = 150 c v gs = 0 v 7.0 v 6 175 200 i d = 20 a 0.025 30 20 10
NTP5863N http://onsemi.com 4 typical performance characteristics figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge v ds , drain ? to ? source voltage (v) q g , total gate charge (nc) 30 20 10 0 0 500 1000 1500 2000 3000 3500 4000 40 30 20 10 0 0 2 4 6 8 10 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source ? to ? drain voltage (v) 100 10 1 1 100 1000 0.2 1.2 1.0 0.8 0.6 0.4 0 20 40 60 80 100 c, capacitance (pf) v gs , gate ? to ? source voltage (v) t, time (ns) i s , source current (a) 60 40 50 2500 t j = 25 c v gs = 0 v c iss c oss c rss 50 60 v ds , drain ? to ? source voltage (v) 0 15 30 45 60 75 t j = 25 c i d = 48 a v gs v ds qt q gs q gd v dd = 48 v i d = 48 a v gs = 10 v t d(off) t d(on) t r t j = 25 c v gs = 0 v t f figure 11. maximum rated forward biased safe operating area v ds , drain ? to ? source voltage (v) i d , drain current (a) 0.1 10 100 1000 0.1 10 100 10 s 100 s 1 ms 10 ms dc v gs = 10 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 1 1 10 0.0 0 20 40 60 80 100 25 50 75 100 125 175 figure 12. maximum avalanche energy vs. starting junction temperature t j , starting junction temperature ( c) e as , single pulse drain ? to ? source avalanche energy (mj) 120 160 i d = 56 a 140 150
NTP5863N http://onsemi.com 5 typical performance characteristics 0.001 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t, pulse time (s) figure 13. thermal response r(t), effective transient thermal resistance ( c/w) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.000001 0.01 10 ordering information device package shipping ? NTP5863Ng to ? 220ab (pb ? free) 50 units / rail ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTP5863N http://onsemi.com 6 package dimensions to ? 220 case 221a ? 09 issue af style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 NTP5863N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
